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姓      名: 胡廷伟
职      称: 讲师
所在院系: 表面室
联系电话: 2147483647
个人主页: gaoxun
E-MAIL: htingwei1236@mail.xjtu.edu.cn
专业方向: 研究领域 SiC热解石墨烯的制备及STM表征
个人详情

工作经历

l  2015/10-至今,西安交通大学,材料学院与工程系,讲师

l  2016/003-2017/03,加州大学尔湾,物理及天文系,访问学者

科研项目

l  1石墨烯大面积制备过程中的金属原子同步掺杂及其物理效应研究, 2017/01-2019/12

l  2 石墨烯模板诱导金属二维结构超薄膜的制备及机理研究, 2016/01-2018/12

学术成果

1. T.W. Hu, D.Y. Ma, F. Ma, et al., Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition. Applied Physics Letters, 2012 12, 101(24): 241903.

2. T. Hu, D. Ma, F. Ma, et al., Direct and diffuse reflection of electron waves at armchair edges of epitaxial graphene . RSC Advances, 2013 10, 3(48): 25735.

3. T.W. Hu, F. Ma, D.Y. Ma, et al., Evidence of atomically resolved 6×6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition. Applied Physics Letters, 2013 05, 102(17): 171910.

4. X.T. Liu, T.W. Hu, Y.P. Miao, et al., Selective growth of Pb islands on graphene/SiC buffer layers . Journal of Applied Physics, 2015 02, 117(6): 065304.

5. T.W. Hu, X.T. Liu, F. Ma, et al., High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism. Nanotechnology, 2015 02, 26(10): 105708.

6. X. Liu, T. Hu, Y. Miao, et al., Substitutional doping of Ag into epitaxial graphene on 6H-SiC substrates during thermal decomposition. Carbon, 2016 08, 104: 233-240.